材料科学
光电子学
二极管
肖特基二极管
拉曼光谱
氮化硼
X射线光电子能谱
肖特基势垒
反向漏电流
绝缘体(电)
半导体
击穿电压
宽禁带半导体
基质(水族馆)
纳米技术
电压
光学
电气工程
海洋学
物理
地质学
工程类
核磁共振
作者
Mingfei Xu,Abhijit Biswas,Tao Li,Ziyi He,S. Luo,Zhaobo Mei,Jingan Zhou,C. H. Chang,Anand B. Puthirath,Róbert Vajtai,Pulickel M. Ajayan,Yuji Zhao
摘要
In this work, we demonstrate the high performance of β-Ga2O3 metal–insulator–semiconductor (MIS) diodes. An ultrathin boron nitride (BN) interlayer is directly grown on the Ga2O3 substrate by pulsed laser deposition. X-ray photoelectron spectroscopy, Raman spectroscopy, and high-resolution transmission electron microscopy confirm the existence of a 2.8 nm BN interlayer. Remarkably, with the insertion of the ultrathin BN layer, the breakdown voltage is improved from 732 V for Ga2O3 Schottky barrier diodes to 1035 V for Ga2O3 MIS diodes owing to the passivated surface-related defects and reduced reverse leakage currents. Our approach shows a promising way to improve the breakdown performance of Ga2O3-based devices for next-generation high-power electronics.
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