纳米线
成核
分子束外延
材料科学
拓扑(电路)
相(物质)
散射
外延
表面状态
拓扑绝缘体
纳米技术
光电子学
曲面(拓扑)
凝聚态物理
图层(电子)
化学
光学
热力学
几何学
物理
数学
有机化学
组合数学
作者
Mathijs G. C. Mientjes,Xin Guan,Pim Lueb,Marcel A. Verheijen,Erik P. A. M. Bakkers
出处
期刊:Cornell University - arXiv
日期:2024-01-01
标识
DOI:10.48550/arxiv.2401.04990
摘要
Topological crystalline insulators (TCIs) are interesting for their topological surface states, which hold great promise for scattering-free transport channels and fault-tolerant quantum computing. A promising TCI is SnTe. However, Sn-vacancies form in SnTe, causing a high hole density, hindering topological transport from the surface being measured. This issue could be relieved by using nanowires with a high surface-to-volume ratio. Furthermore, SnTe can be alloyed with Pb reducing the Sn-vacancies while maintaining its topological phase. Here we present the catalyst-free growth of monocrystalline PbSnTe in molecular beam epitaxy (MBE). By the addition of a pre-deposition stage before the growth, we have control over the nucleation phase and thereby increase the nanowire yield. This facilitates tuning the nanowire aspect ratio by a factor of four by varying the growth parameters. These results allow us to grow specific morphologies for future transport experiments to probe the topological surface states in a Pb1-xSnxTe-based platform.
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