纳米片
材料科学
晶体管
神经形态工程学
双稳态
光电子学
备用电源
硅
纳米技术
计算机科学
电气工程
电压
人工神经网络
工程类
机器学习
作者
Yunwoo Shin,Jaemin Son,Juhee Jeon,Seungho Ryu,Kyoungah Cho,Sangsig Kim
标识
DOI:10.1002/aelm.202300764
摘要
Abstract In this study, a triple‐gated transistor with a p + ‐i‐n + silicon nanosheet (NS) is proposed as a single synaptic device, and bidirectional synaptic functions are realized using reconfigurable memory characteristics. The triple‐gated NS transistor features steep switching and bistable characteristics with a subthreshold swing below 5 mV dec −1 and an ON/OFF current ratio of ≈5 × 10 6 for both the n‐ and p‐channel modes. This transistor exhibits electrically symmetric reconfigurable memory characteristics with an ON current ratio of 1.02 for the n‐ and p‐channel modes. Moreover, the bidirectional synaptic weight updates of binarized spike‐timing‐dependent plasticity learning are successfully performed in a single transistor. This study demonstrates the potential of a triple‐gated NS transistor for achieving compact synaptic arrays in large‐scale silicon‐based neuromorphic computing systems.
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