堆积
材料科学
铁电性
各向异性
订单(交换)
图层(电子)
非线性系统
凝聚态物理
光学
光电子学
纳米技术
核磁共振
量子力学
物理
电介质
经济
财务
作者
R.A. Moqbel,Ryo Nanae,Satsuki Kitamura,Ming‐Hao Lee,Yann‐Wen Lan,Chi‐Cheng Lee,Kosuke Nagashio,Kung‐Hsuan Lin
标识
DOI:10.1002/adom.202400355
摘要
Abstract The giant second‐order nonlinearity of SnS with ferroelectric stacking is reported. Based on theoretical calculations, the susceptibility of second harmonic generation (SHG) from SnS with ferroelectric stacking is up to 1354 pm V −1 , which is three orders of magnitude higher than the values of traditional nonlinear crystals such as BBO and KTP. The SHG from ferroelectric SnS few layers is experimentally measured and its intensity is found to be 131 times larger than that of a MoS 2 monolayer under the same experimental conditions, with a photon energy of 1.55 eV. The SHG susceptibility is determined to be on the order of 100 pm V −1 . Numerous SnS flakes are systematically investigated using polarization‐resolved SHG. Micrometer‐sized flakes with a single domain are found, and their SHG anisotropic patterns fit well with the theoretical calculations derived from first‐principles methods. The variation in SHG anisotropic patterns, attributed to SHG interference from multiple domains, is investigated both theoretically and experimentally. Additionally, the impact of stacking disorder on the SHG anisotropic pattern is explored. It is demonstrated that polarization‐resolved SHG microscopy is a valuable tool for identifying domains in SnS flakes and examining stacking disorder.
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