材料科学
硫化铅
带隙
量子点
串联
光电子学
量子点太阳电池
纳米技术
混合太阳能电池
钝化
太阳能电池
聚合物太阳能电池
能量转换效率
多激子产生
开路电压
图层(电子)
电压
电气工程
工程类
复合材料
作者
Dipak Dattatray Shinde,Anjali Sharma,Neha V. Dambhare,Chandan Mahajan,Arindam Biswas,Anurag Mitra,Arup K. Rath
标识
DOI:10.1021/acsami.4c09364
摘要
The wide tunability of the energy bandgap of colloidal lead sulfide (PbS) quantum dots (QDs) has uniquely positioned them for the development of single junction and tandem solar cells. While there have been substantial advancements in moderate and narrow bandgap PbS QDs-ideal for single junction solar cells and the bottom cell in tandem solar cells, respectively; progress has been limited in high-bandgap PbS QDs that are ideally suited for the formation of the top cell in tandem solar cells. The development of appropriate high bandgap PbS QDs would be a major advancement toward realizing efficient all-QD tandem solar cells utilizing different sizes of PbS QDs. Here, we report a comprehensive approach encompassing synthetic strategy, ligand engineering, and hole transport layer (HTL) modification to implement high-bandgap PbS QDs into solar cell devices. We achieved a greater degree of size homogeneity in high-bandgap PbS QDs through the use of a growth retarding agent and a partial passivation strategy. By adjusting the ligand polarity, we successfully grow HTL over the QD film to fabricate solar cells. With the aid of an interface modifying layer, we incorporated an organic HTL for the realization of high-performance solar cells. These solar cells exhibited an impressive open-circuit voltage of 0.824 V and a power conversion efficiency of 10.7%, marking a 360% improvement over previous results.
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