材料科学
太阳能电池
能量转换效率
钙钛矿(结构)
钙钛矿太阳能电池
锡
制作
铅(地质)
电容
卤化物
电流密度
电压
灵活性(工程)
工程物理
纳米技术
化学工程
光电子学
电气工程
无机化学
电极
冶金
工程类
替代医学
数学
物理化学
化学
病理
量子力学
地貌学
医学
统计
物理
地质学
作者
Sagar Bhattarai,Rahul Pandey,Jaya Madan,Firdausa Ahmed,Shahnaz Shabnam
标识
DOI:10.1016/j.mtcomm.2022.104364
摘要
Lead-halide perovskites (PVKs) based solar cells have seen remarkable consideration due to improved efficiency, ease of fabrication, versatility and flexibility. However, the existence of lead, a toxic material, raises several concerns about the environment and the health of living beings and hinders their future commercialization. Therefore, a considerable surge in searching for an alternate lead-free PVK has started in the past few years. Several lead-free PVK solar cells have been proposed; nonetheless, achievable conversion efficiency from these devices is not up to the mark due to some inherent losses. Therefore, a comprehensive theoretical analysis is needed to understand the root of these losses for uplifting efficiency. Thus, the results of a specific modelling technique for all-inorganic lead-free PVK-based solar cells, namely cesium tin germanium halide (CsSnGeI 3 ), to achieve the highest feasible efficiencies. The current simulation uses an electron transport material (ETM) of TiO 2 and a hole transport material (HTM) of Spiro-OMeTAD to sandwich PVK layers of CsSnGeI 3 (Eg=1.5 eV) for the PSCs. The device is subjected to further analysis and optimization of active layer thickness, defect density, operating temperature, defect density, capacitance-voltage (C-V) and impedance analysis to investigate the different performance parameters. The optimized conversion efficiency of 28.4% has been achieved with CsSnGeI 3 -based PSC. Results reported in this study may pave the way to developing lead-free PVK solar cells through higher conversion efficiencies. • A comprehensive study of all inorganic PSCs are accomplished using SCAPS-1D simulating software. • The CTM combinations of TiO 2 and Spiro-OMeTAD attains the best possible device outputs. • The lesser defective CsSnGeI 3 layer at optimal thickness offers excellent efficiency of 28.35%. • The present work can be valuable for futuristic device optimization of PSC.
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