记忆电阻器
材料科学
电子线路
纳米技术
电子工程
电气工程
工程类
作者
Lu Wang,Ze Zuo,Xiafan Zhang,Dianzhong Wen
标识
DOI:10.1002/aelm.202400193
摘要
Abstract The demand for processing power has increased dramatically as a result of the growth of information technology. The traditional computing system has the fatal disadvantage of separating storage and computing. Many data are repeatedly moved between storage and computing, and its time cost and energy consumption are incalculable. Compared with traditional logic circuits, memristor‐based logic circuits have lower power consumption and smaller circuit areas, so memristor logic circuits are an effective way to realize efficient computing systems. In this paper, an egg albumen (EA)‐based memristor with threshold characteristics is fabricated. The device has low power consumption and stable performance and can work in an extensive temperature difference range for a long time. Since the 1S1R (one‐selector‐one‐resistor) unit composed of the device as a selector and another bipolar device can effectively reduce the leakage current, the cross array integrating multiple 1S1R units can achieve high‐density storage and calculation. The “AND” and “OR” logic functions based on memristor ratioed logic are realized by the 1S1R memory array. The scheme realizes the integration of storage and computing, breaks the bottleneck of von Neumann, and provides an effective way to build a new and efficient computing system.
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