碳纳米管场效应晶体管
碳纳米管
材料科学
纳米技术
场效应晶体管
晶体管
硅
碳纳米管量子点
光电子学
纳米管
电气工程
电压
工程类
作者
S. Darwin,E. Francy Irudaya Rani,E. Fantin Irudaya Raj,M. Appadurai,Muralidhar M. Balaji
标识
DOI:10.1109/icoei53556.2022.9776858
摘要
Carbon Nanotube Field Effect Transistors (CNTFET) are excellent in the nano-material regime for providing higher performance in terms of power consumption even though the device is densely packed. A CNTFET is a type of FET that involves a single carbon nanotube (CNT) or carbon nanotubes in the form of arrays as the channel material rather than bulk silicon as in standard MOSFETs. Various device architectures, like double gate FETs and back gate FETs, are included. Different kinds of CNTFETs have been explained in terms of structure, functioning, and feature. The functioning, dc parameters, and effectiveness of many properties of CNTFETs have all been investigated.
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