Turn-OFF Transient Analysis of Superjunction IGBT

A turn-OFF transient analysis of the superjunction (SJ) insulated-gate bipolar transistor (IGBT) based on an analytical model as a function of structural parameters is presented in this paper. The physical phenomenon dependent on the doping density of the n-/p-pillar of the SJ IGBT could be explained using the analytical model to predict the static and transient characteristics. From this model, tradeoff between turn-OFF loss and ON-state voltage has been obtained, as verified by the TCAD simulations with a good agreement.