Impact of Contact Resistance on 2D Negative-Capacitance FETs

In this work, we investigate and analyze the impact of contact resistance (RSD) on the negative-capacitance FET with 2D transition-metal-dichalco-genide channel (NC-TMDFET). We report a ferroelectric capacitance (CFE) feedback mechanism of the NC-TMDFET that can be used to suppress the impact of RSD. Our study indicates that low remnant polarization (Pr) ferroelectric material can be utilized to leverage this effect for NC-TMDFETs under the presence of significant RSD.