串联
材料科学
硅
太阳能电池
图层(电子)
硅烷
降级(电信)
光电子学
纳米技术
复合材料
电信
计算机科学
作者
Guofu Hou,Peng Lu,Han Xiao-Yan,Guijun Li,Wei Chang-Chun,Ziyang Hu,Ying Zhao
出处
期刊:Chinese Physics
[Science Press]
日期:2012-01-01
卷期号:61 (13): 138401-138401
标识
DOI:10.7498/aps.61.138401
摘要
Improving the light-soaking stability of silicon-based thin film solar cells is a very important issue for industrial production. In order to obtain high-efficiency a-Si:H/μc-Si:H tandem solar cells with good light-soaking stability, In this paper we first present the results about a-Si:H top solar cell with high light-soaking stability. Then we mainly investigate the influences of N/P tunnel junction and silane concentration (SC) profiling of μc-Si:H i-layer on the light-soaking stability of a-Si:H/μc-Si:H tandem solar cells. Up to now we have been able to obtain a-Si:H/μc-Si:H tandem solar cell with a light-soaking degradation ratio of only 7%.
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