Self-healing LDMOSFET for high-voltage application on high-k/metal gate CMOS process

A self-healing laterally diffused MOSFET (LDMOSFET) was developed in this work. With this technology, hot-carrier instability (HCI) degradation can be efficiently suppressed without the drawback of increasing leakage. Substrate current and time dependence of the HCI degradation (N-factor) were investigated to understand the healing mechanism further. With healing gate bias, HCI stress injected hot carriers can be recovered and consequently the current degradation suppressed. Finally, ~30% reduction of HCI degradation can be achieved with the technology.