量子位元
物理
量子点
自旋(空气动力学)
自旋工程
泡利不相容原理
量子计算机
量子力学
凝聚态物理
量子隧道
囚禁离子量子计算机
量子
量子纠错
电子
自旋极化
热力学
作者
Rui-Zi Hu,Rong-Long Ma,Ming Ni,Xin Zhang,Yuan Zhou,Ke Wang,Gang Luo,Gang Cao,Zhenzhen Kong,Guilei Wang,Hai-Ou Li,Guo‐Ping Guo
出处
期刊:Nanomaterials
[Multidisciplinary Digital Publishing Institute]
日期:2021-09-24
卷期号:11 (10): 2486-2486
被引量:7
摘要
In the last 20 years, silicon quantum dots have received considerable attention from academic and industrial communities for research on readout, manipulation, storage, near-neighbor and long-range coupling of spin qubits. In this paper, we introduce how to realize a single spin qubit from Si-MOS quantum dots. First, we introduce the structure of a typical Si-MOS quantum dot and the experimental setup. Then, we show the basic properties of the quantum dot, including charge stability diagram, orbital state, valley state, lever arm, electron temperature, tunneling rate and spin lifetime. After that, we introduce the two most commonly used methods for spin-to-charge conversion, i.e., Elzerman readout and Pauli spin blockade readout. Finally, we discuss the details of how to find the resonance frequency of spin qubits and show the result of coherent manipulation, i.e., Rabi oscillation. The above processes constitute an operation guide for helping the followers enter the field of spin qubits in Si-MOS quantum dots.
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