Filament Engineering of Two‐Dimensional h‐BN for a Self‐Power Mechano‐Nociceptor System

Abstract The switching variability caused by intrinsic stochasticity of the ionic/atomic motions during the conductive filaments (CFs) formation process largely limits the applications of diffusive memristors (DMs), including artificial neurons, neuromorphic computing and artificial sensory systems. In this study, a DM device with improved device uniformity based on well‐crystallized two‐dimensional (2D) h ‐BN, which can restrict the CFs formation from three to two dimensions due to the high migration barrier of Ag + between h ‐BN interlayer, is developed. The BN‐DM has potential arrayable feature with high device yield of 88%, which can be applied for building a reservoir computing system for digital pattern recognition with high accuracy rate of 96%, and used as an artificial nociceptor to sense the external noxious stimuli and mimic the important biological nociceptor properties. By connecting the BN‐DM to a self‐made triboelectric nanogenerator (TENG), a self‐power mechano‐nociceptor system, which can successfully mimic the important nociceptor features of “threshold”, “relaxation” and “allodynia” is designed.