Electrochemical properties and morphology of boron-doped diamond thin films

A boron-doped diamond (BDD) thin film was synthesized using the hot filament chemical vapor deposition (HFCVD) method. The surface shape, growth rate, bonding structure, and electrochemical properties of the BDD thin films were estimated through scanning electron microscopy (SEM), Raman spectroscopy, and cyclic voltammetry. As the boron doping concentration increased, the growth rate and crystal size of the diamond thin film decreased. Through Raman analysis, it was confirmed that the 1332 cm[Formula: see text] peak of diamond gradually became less intense, and peaks were generated at 480 cm[Formula: see text] and 1220 cm[Formula: see text] due to the bonding of boron to carbon. Cyclic voltammetry analysis of the BDD thin film showed a large potential window with a width of approximately 2.8 V. The highest applied voltage (2 V) versus response current (0.02 A) was obtained at a B/C ratio of 2000 ppm.