密度泛函理论
掺杂剂
单层
空位缺陷
过渡金属
吸热过程
吉布斯自由能
范德瓦尔斯力
化学物理
化学
兴奋剂
材料科学
Atom(片上系统)
计算化学
物理化学
结晶学
吸附
热力学
纳米技术
分子
物理
光电子学
有机化学
催化作用
计算机科学
嵌入式系统
作者
Ijeoma Cynthia Onyia,Stella Ogochukwu Ezeonu,Dmitri Bessarabov,Kingsley Onyebuchi Obodo
标识
DOI:10.1016/j.commatsci.2021.110613
摘要
Spin-polarized density functional theory calculations with van der Waals correction were applied to investigate the presence of transition metal dopant atoms (Fe, Co, Ni, Pd and Pt) and their respective nitrogen vacancy complexes in the Ti3N2 MXene monolayer as candidate material for hydrogen evolution reaction (HER). We found that the transition metal dopant atoms as well as transition metal vacancy will feasibly form. However, the cation transition metal dopant atoms with nitrogen vacancy complexes and nitrogen vacancy are endothermic except for the PtTi + VN complex, thus would require additional energy to be realized. To evaluate for the HER activity, the Gibbs free energy and adsorption energetics were calculated. We found that the H atom stably bind to the considered surface configurations. However, the Gibbs free energy is far from optimal for the dopant complexes and the pristine Ti3N2 MXene monolayer. All the considered configurations have magnetic metallic ground state with possible application as 2D magnetic system.
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