静电放电
可扩展性
输电线路
电力传输
电子工程
电气工程
光电子学
工程类
二极管
材料科学
计算机科学
电压
数据库
作者
Cheng Li,Feilong Zhang,Chenkun Wang,Zijin Pan,Mengfu Di,Albert Wang
标识
DOI:10.1109/jeds.2021.3110955
摘要
This paper reports the design and analysis of scalable Sudoku-type diode-triggered silicon-controlled rectifier (DTSCR) electrostatic discharge (ESD) protection structures fabricated in a foundry 22nm fully-depleted silicon-on-insulator (FDSOI) technology. 3D TCAD and ESD testing confirm that the Sudoku DTSCR ESD structures can dramatically improve the ESD area efficiency. Transmission line pulse (TLP) measurement shows a high ESD area efficiency of 6.47mA/mum2 for Sudoku-DTSCR, 64.6% improvement over traditional finger-DTSCR structure. A scalability model was derived as design guidelines for optimizing Sudoku DTSCR ESD protection array structures.
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