Development of Novel Bevel Profile for Wafer-Level Stacking Technology

A novel bevel profile suited for wafer-level stacking technology with ultra-thinning was studied. Wafer thinning by grinding induces cracking at the wafer edge, and the occurrence of cracks increases significantly when the bevel angle is smaller than 50°. In consideration of wafer handling and ultra-thinning for device manufacturing, we propose a profile with a two-step bevel angle to reduce surface loss of the wafer.