Fabrication of α-Ga<inf>2</inf>O<inf>3</inf> thin films using α-Al<inf>x</inf>Ga<inf>1−x</inf>)<inf>2</inf>O<inf>3</inf> buffer layers and its crystal structure properties

Corundum-structured α-Ga ₂ O ₃ is a prospective material for power devices because it has expectable large bandgap and high breakdown field. We have shown the fabrication of α-Ga ₂ O ₃ thin films on sapphire substrates, but many dislocations were confirmed in the α-Ga ₂ O ₃ thin films. In this presentation, we report the growth of α-Ga ₂ O ₃ thin films on α-(Al _x Ga _1-x ) ₂ O ₃ buffer layers by mist CVD, for improving the crystallinity of the α-Ga ₂ O ₃ thin films.