材料科学
紫外线
光电子学
响应度
钙钛矿(结构)
纳米线
超短脉冲
量子点
量子效率
光探测
探测器
光电探测器
纳米技术
光学
物理
激光器
化学工程
工程类
作者
Jiawen Lu,Xuexi Sheng,Guoqing Tong,Zhongwei Yu,Xiaolin Sun,Linwei Yu,Xiangxing Xu,Junzhuan Wang,Jun Xu,Yi Shi,Kunji Chen
标识
DOI:10.1002/adma.201700400
摘要
Inorganic CsPbX3 (X = Cl, Br, I, or hybrid among them) perovskite quantum dots (IPQDs) are promising building blocks for exploring high performance optoelectronic applications. In this work, the authors report a new hybrid structure that marries CsPbX3 IPQDs to silicon nanowires (SiNWs) radial junction structures to achieve ultrafast and highly sensitive ultraviolet (UV) detection in solar-blind spectrum. A compact and uniform deployment of CsPbX3 IPQDs upon the sidewall of low-reflective 3D radial junctions enables a strong light field excitation and efficient down-conversion of the ultraviolet incidences, which are directly tailored into emission bands optimized for a rapid photodetection in surrounding ultrathin radial p-i-n junctions. A fast solar-blind UV detection has been demonstrated in this hybrid IPQD-NW detectors, with rise/fall response time scales of 0.48/1.03 ms and a high responsivity of 54 mA W-1 @200 nm (or 32 mA W-1 @270 nm), without the need of any external power supply. These results pave the way toward large area manufacturing of high performance Si-based perovskite UV detectors in a scalable and low-cost procedure.
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