神经形态工程学
电阻随机存取存储器
材料科学
记忆电阻器
MNIST数据库
随机性
双层
可靠性(半导体)
光电子学
图层(电子)
非易失性存储器
计算机科学
电压
人工神经网络
纳米技术
电子工程
电气工程
人工智能
物理
功率(物理)
遗传学
量子力学
工程类
生物
膜
数学
统计
作者
Xiaobing Yan,Cuiya Qin,Chao Lü,Jianhui Zhao,Rujie Zhao,Deliang Ren,Zhenyu Zhou,Hong Wang,Jingjuan Wang,Lei Zhang,Xiaoyan Li,Yifei Pei,Wenyu Gong,Qianlong Zhao,Kaiyang Wang,Zuoao Xiao,Hui Li
标识
DOI:10.1021/acsami.9b17160
摘要
The development of the information age has made resistive random access memory (RRAM) a critical nanoscale memristor device (MD). However, due to the randomness of the area formed by the conductive filaments (CFs), the RRAM MD still suffers from a problem of insufficient reliability. In this study, the memristor of Ag/ZrO2/WS2/Pt structure is proposed for the first time, and a layer of two-dimensional (2D) WS2 nanosheets was inserted into the MD to form 2D material and oxide double-layer MD (2DOMD) to improve the reliability of single-layer devices. The results indicate that the electrochemical metallization memory cell exhibits a highly stable memristive switching and concentrated ON- and OFF-state voltage distribution, high speed (∼10 ns), and robust endurance (>109 cycles). This result is superior to MDs with a single-layer ZrO2 or WS2 film because two layers have different ion transport rates, thereby limiting the rupture/rejuvenation of CFs to the bilayer interface region, which can greatly reduce the randomness of CFs in MDs. Moreover, we used the handwritten recognition dataset (i.e., the Modified National Institute of Standards and Technology (MNIST) database) for neuromorphic simulations. Furthermore, biosynaptic functions and plasticity, including spike-timing-dependent plasticity and paired-pulse facilitation, have been successfully achieved. By incorporating 2D materials and oxides into a double-layer MD, the practical application of RRAM MD can be significantly enhanced to facilitate the development of artificial synapses for brain-enhanced computing systems in the future.
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