Analysis of series and shunt resistance in silicon solar cells using single and double exponential models

Series and shunt resistances in solar cells are parasitic parameters, which affect the illuminated current–voltage (I–V) characteristics and efficiency of cells. Very high values of series resistance (R s ) and very low values of shunt resistance (R sh ) reduce short-circuit current density (J sc ) and open-circuit voltage (V oc ), respectively. In this study, the analysis of R s and R sh for silicon solar cells using single and double exponential models are described. Rs and Rsh for solar cells are determined from its illuminated I–V curves. The pre-exponential constants and ideality factors, I o and n in single and I o1 , I o2 and n 1 , n 2 in double exponential models are determined. Shunt resistance is nearly the same for both single and double exponential models. However, the series-resistance values are lower when calculated with double exponential model as compared with single exponential model.