材料科学
兴奋剂
光电子学
化学浴沉积
石墨烯
薄膜
电极
工作职能
硫化镉
能量转换效率
氧化物
透射率
图层(电子)
纳米技术
物理化学
化学
冶金
作者
Jihun Kim,Jun Sung Jang,Seung Wook Shin,Hyeonghun Park,Woo‐Lim Jeong,Seung‐Hyun Mun,Jung‐Hong Min,Jiyoung Ma,Jaeyeong Heo,Dong-Seon Lee,Jung‐Je Woo,Jihun Kim,Hyeong-Jin Kim
出处
期刊:Small
[Wiley]
日期:2023-03-02
卷期号:19 (22)
被引量:1
标识
DOI:10.1002/smll.202207966
摘要
Herein, a novel combination of Mg- and Ga-co-doped ZnO (MGZO)/Li-doped graphene oxide (LGO) transparent electrode (TE)/electron-transporting layer (ETL) has been applied for the first time in Cu2 ZnSn(S,Se)4 (CZTSSe) thin-film solar cells (TFSCs). MGZO has a wide optical spectrum with high transmittance compared to that with conventional Al-doped ZnO (AZO), enabling additional photon harvesting, and has a low electrical resistance that increases electron collection rate. These excellent optoelectronic properties significantly improved the short-circuit current density and fill factor of the TFSCs. Additionally, the solution-processable alternative LGO ETL prevented plasma-induced damage to chemical bath deposited cadmium sulfide (CdS) buffer, thereby enabling the maintenance of high-quality junctions using a thin CdS buffer layer (≈30 nm). Interfacial engineering with LGO improved the Voc of the CZTSSe TFSCs from 466 to 502 mV. Furthermore, the tunable work function obtained through Li doping generated a more favorable band offset in CdS/LGO/MGZO interfaces, thereby, improving the electron collection. The MGZO/LGO TE/ETL combination achieved a power conversion efficiency of 10.67%, which is considerably higher than that of conventional AZO/intrinsic ZnO (8.33%).
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