Advancing High-Performance Memristors Enabled by Position-Controlled Grain Boundaries in Controllably Grown Star-Shaped MoS2

Two-dimensional transition metal dichalcogenides are highly promising platforms for memristive switching devices that seamlessly integrate computation and memory. Grain boundaries (GBs), an important micro-nanoscale structure, hold tremendous potential in memristors, but their role remains unclear due to their random distribution, which hinders fabrication. Herein, we present a novel chemical vapor deposition approach to synthesize star-shaped MoS