低噪声放大器
噪声系数
单片微波集成电路
宽带
带宽(计算)
晶体管
电气工程
放大器
计算机科学
炸薯条
砷化镓
电子工程
材料科学
光电子学
电信
工程类
电压
作者
Xuefei Xuan,Zhiqun Cheng,Tingwei Gong,Zhiwei Zhang,Chao Le
标识
DOI:10.1017/s1759078724001235
摘要
Abstract An ultra-wideband current-reused low-noise amplifier (LNA) monolithic microwave integrated circuit design is presented in this letter. Negative feedback networks are employed at both stages of the proposed LNA to expand bandwidth. Furthermore, source adaptive bias networks is designed in the first stage and combined with a current-reused construction to acquire a compact chip size and maintain low power consumption. Then, the validation of design theory is implemented by employing a 0.15-µm gallium arsenide pseudomorphic high-electron-mobility transistor process. The measured results show that the proposed LNA achieves a small signal gain of 15.5–17.8 dB, a noise figure of 3–3.65 dB, and an output 1 dB compression point (OP 1 dB ) of 14.5–15.5 dBm from the target bandwidth of 2–18 GHz. In addition, the fabricated LNA consumes 220 mW from a 5 V supply and occupies a chip area of 1.2 × 1.5 mm 2 .
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