材料科学
光电探测器
兴奋剂
光电子学
薄膜
纳米技术
作者
Li Xu,Haowei Liu,Jianmei Xu,Wei Zhou,Zhihong Yang,Wei Xu,Jian Sun
标识
DOI:10.1021/acsami.4c11974
摘要
Jones, and a response time of 77 μs/30 μs (0 V bias). The response time exhibits the fastest rise and decay times compared with the other CuI-based self-powered UV photodetectors in recent years, showcasing promising applications in the realm of transparent electronics moving forward. This study also presents an effective strategy for enhancing the electrical properties of p-type semiconductors and devices through effective doping.
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