P‐1.2: Realization of Visible Detection of InGaZnO Thin‐Film Transistors by Coating (PEA)2PbI4 Light Absorbing Layer

In this work, the visible detection of RF‐sputtered InGaZnO (IGZO) thin‐film transistor (TFT) is realized by spin‐coating a light absorption layer of (PEA) 2 PbI 4 on the top of IGZO TFTs. A large number of carriers flow into the IGZO channel after visible light illuminations, resulting in the negative shift of the transfer curves and thus realizing the visible detection. The IGZO/(PEA) 2 PbI 4 bilayer‐based phototransistors exhibit a photoresponsibility of 63.2 A/W and detectivity of 1.13 × 10 14 Jones under the illumination of green light (550 nm).