余辉
发光
材料科学
荧光粉
光致发光
持续发光
兴奋剂
分析化学(期刊)
发射强度
荧光
激活剂(遗传学)
光电子学
光化学
光学
热释光
化学
物理
生物化学
伽马射线暴
色谱法
天文
基因
作者
Yang Lü,Kexin Zhang,Zhilin Yang,Xiaoxiao Ye,Yanhao Huang,Miao Liu,Xudong Cui,Feng Wang
标识
DOI:10.1016/j.optmat.2023.114270
摘要
In this work, Zn2SnO4:xCr3+ with high near-infrared luminescence intensity (broad emission centered at 800 nm and sharp emission at 703 nm) were successfully prepared by high temperature solid state method. Measurements indicated that the samples exhibited obvious photoluminescence as well as persistent luminescence properties. The results of X-ray diffraction indicated that high temperature facilitated the entry of Cr3+ into the Zn2SnO4 crystal lattice and formed replacement doping and promoted the luminescence efficiency of the samples. And, under the condition of 1450 °C and 0.002 at% Cr3+ concentration, sample with optimum NIR fluorescence properties was prepared. In the high-temperature sintering process, many defects of Zn2SnO4 were generated, which effectively promoted the formation of vacancies. The energy levels of these lattice defects (trap energy levels) facilitated the sub-stable trapping of electrons and produce afterglow properties. Analysis of luminescence mechanism reveals that the broad emission band centered at 800 nm and the sharp emission peak at 703 nm were derived from the energy level transitions of 4T2(4F)→4A2 and 2E→4A2 of Cr3+, respectively. Though, the long afterglow luminescence duration of Zn2SnO4:Cr3+ needs to be further improved compared with gallate-based NIR phosphors, Zn2SnO4:Cr3+ do have a promising application in bio-imaging due to its special NIR emission range.
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