有机场效应晶体管
材料科学
晶体管
阈下斜率
场效应晶体管
计算机科学
阈下传导
光电子学
纳米技术
电气工程
电压
工程类
作者
Yiru Wang,Wanxin Huang,Jiahao Li,Shanshuo Liu,Jingwei Fu,Le Wang,Haotian Wang,Wen Li,Linghai Xie,Haifeng Ling,Wei Huang
出处
期刊:Small
[Wiley]
日期:2024-10-31
标识
DOI:10.1002/smll.202406522
摘要
Abstract Organic field‐effect transistor (OFET)‐based sensors have gained considerable attention for information perception and processing in developing artificial intelligent systems owing to their amplification function and multiterminal regulation. Over the last few decades, extensive research has been conducted on developing OFETs with steep subthreshold swings ( SS ) to achieve high‐performance sensing. In this review, based on an analysis of the critical factors that are unfavorable for a steep SS in OFETs, the corresponding representative strategies for achieving steep SS are summarized, and the advantages and limitations of these strategies are comprehensively discussed. Furthermore, a bridge between SS and OFET sensor performance is established. Subsequently, the applications of OFETs with steep SS in sensor systems, including pressure sensors, photosensors, biochemical sensors, and electrophysiological signal sensors. Lastly, the challenges faced in developing OFET sensors with steep SS are discussed. This study provides insights into the design and application of high‐performance OFET sensor systems.
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