Lv6
2500 积分 2024-03-31 加入
Phase-separation microstructures and excellent luminescent performance in strain-relaxed red-emitting bulk InGaN active region
18小时前
已完结
Wavelength-stable InGaN-based amber micro-LEDs
18小时前
已完结
Impact of sidewall conditions on internal quantum efficiency and light extraction efficiency of micro-LEDs
1个月前
已完结
Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal–organic vapor deposition
1个月前
已完结
Selective-area growth of thin GaN nanowires by MOCVD
1个月前
已完结
Challenges in Carrier Gas-Controlled Growth of GaN Nanorods: Achieving Uniformity and Top-Facet Tunability in Pulsed-Mode MOCVD
1个月前
已完结
Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
2个月前
已完结
Defect structure in GaN pyramids
2个月前
已完结
Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum Wells
2个月前
已完结
High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers
2个月前
已完结
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