Lv4
600 积分 2024-03-31 加入
An AlN/AlxGa1-xN/GaN graded channel HEMT with enhanced power and linearity performance
8小时前
已完结
Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications
8小时前
已完结
X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors
8小时前
已完结
Reduction in the Number of Quantum Wells Alleviates the Sidewall Effect in AlGaInP-Based Red Micro-LEDs
5天前
已完结
740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE
24天前
已完结
38‐3: Invited Paper: MicroLED Device Technology for Low‐Power Wearable Displays
24天前
已完结
In‐Plane Sensing Opportunities in MicroLED Displays
24天前
已完结
True‐Red InGaN Light‐Emitting Diodes for Display Applications
25天前
已完结
Suppression of indium clustering and quantum confined stark effect of InGaN LED on silicon (111)
25天前
已完结
Why and how In composition fluctuations appear in InGaN?
25天前
已完结
皖公网安备34019202002308
