量子点
材料科学
基质(水族馆)
光电子学
纳米技术
波长
量子
物理
海洋学
地质学
量子力学
作者
Xiaoyang Zhao,Wen Liu,Yidi Bao,Xiaoling Chen,Chunxue Ji,Guiqiang Yang,Bo Wei,Fuhua Yang,Xiaodong Wang
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2024-10-31
卷期号:36 (5): 052001-052001
被引量:2
标识
DOI:10.1088/1361-6528/ad8d61
摘要
In(Ga)As quantum dot (QD) with uniform size and controlled sites have great potential in optical communications and quantum computing. In this review, we focus on the site-controlled preparation of In(Ga)As quantum dot arrays based on patterned substrates, including the improvements made by the researchers to enhance the quantum dot site-control capability and optical quality. Based on the current research on site-controlled In(Ga)As QDs, it has been possible to grow uniformly ordered In(Ga)As QD arrays, in which the size, morphology, and nucleus location of each quantum dot can be precisely controlled. In addition, the study of deoxidation treatment of patterned substrates has led to the performance enhancement of the prepared QD arrays. Finally, we propose that the future development of site-controlled In(Ga)As QD arrays lies in improving the optical quality and tuning their emission wavelength to the telecommunication band.
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