Local hybridized states of adsorbed atomic Sn on WS2 substrate

We study the growth of Sn and the local electronic properties of Sn grown WS2 surfaces by in-situ scanning tunneling microscopy (STM), scanning tunneling spectroscopy, and first principles density functional theory calculations. Our investigations suggest substitutional doping of Sn at the S sites, with Sn atoms occupying a slightly elevated position of 80 pm on the WS2 surface. These results agree well with our STM observations on room temperature growth of atomic Sn, indicating commensurate or nearly commensurate adsorption at the top S sites with a buckling height of 40 ± 10 pm. Pristine WS2 without any S vacancies on the surface exhibits a bandgap of 1.39 eV, while ingap local density of states comprised of W d and S p orbitals are detected when S vacancies are considered. Upon adsorption of Sn atoms, we find the signature of modulated hybridized ingap electronic states of Sn p and W d orbitals with a spin orbit coupling interaction up to 38 meV at the K point of the Brillouin zone. These results throw important light on the future fabrication of Janus like SnWS vertical heterojunctions with atomic level doping accuracy, which will have enormous device applications.