Stacking III‐Nitride Ultraviolet‐B Light Emitters with High Efficiency via a Lattice‐Engineered Architecture

N. As such, high-quality full-Al-content AlGaN epitaxy, in particular with an Al content below 50%, is realized, which brings about a significant performance improvement in 310-nm UVB LEDs, with a maximum wall-plug efficiency achieving 4.88%. This study makes a major breakthrough in the stacking of AlGaN-based UVB light emitters and definitely speeds up their further applications.