Power‐Efficient and Highly Uniform BiFeO3‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect

Abstract Memristor, processing data storage, and logic operation all‐in‐one, is expected to create a new era of neuromorphic computing and digital logic. Here, this work demonstrates a BiFeO 3 ‐based memristor with Ti‐doped indium tin oxide as the top electrode material, exhibiting high metrics such as a switching voltage of ≈0.15 V, coefficients of variations of low resistance state of ≈0.46% and a large on/off ratio of ≈10 3 . What is more, the device exhibits a power consumption as low as ≈1.02 µW in set process with a self‐compliance current. To elucidate the resistive switching behavior, the role of TiInSnO electrode and the corresponding current conduction mechanism have been thoroughly investigated. In this end, the effect of Ti‐doping on the resistance behavior is demonstrated based on the current fitting analysis and first‐principles calculations based on density functional theory. It is clarified that the doped Ti ions may trap oxygen ions to concentrate around the interface between resistance switching layer and electrode, resulting in more stable and uniform performance. The findings suggest that, with TiInSnO film as the novel electrode of memristors, the present study can offer a significantly promising route to implement low‐power, highly uniform information storage, and neuromorphic computing technology.