Molybdenum-integrated High-Speed 3D NAND : Breakthrough in Scalibility and Reliability for Mass Production

Beyond extreme scaling in 3-dimensional NAND (3D NAND) flash memory has been limited in Tungsten (W) word line (WL) due to insufficient resistivity and reliability. We report the first mass production of low resistive and fluorine (F)-free Mo for high-speed 9th generation samsung 3D NAND. Industrial-scale high-volume manufacturing of Mo gate was successfully demonstrated by mass verifications of the cell characteristics and reliability, therefore, our innovative breakthrough opens the path toward further scalability for next-generation flash memory.