记忆电阻器
神经形态工程学
横杆开关
商业化
计算机科学
钥匙(锁)
记忆晶体管
计算机体系结构
人工神经网络
电阻随机存取存储器
电阻式触摸屏
高效能源利用
晶体管
材料科学
电子工程
人工智能
电气工程
人工智能应用
纳米技术
能量(信号处理)
CMOS芯片
范式转换
物理神经网络
作者
Kaikai Gao,Bai Sun,Zheng Cao,Mengna Wang,Junchao Zhang,Kun Wang,Guangdong Zhou,Zhenjiang Lu,Jinyou Shao
标识
DOI:10.1002/adfm.202528309
摘要
ABSTRACT Inspired by the efficient information processing of the human brain, the construction of biomimetic neural networks for brain‐inspired computing (BIC) has become a research hotspot. Currently, memristors are considered one of the most promising passive electronic components in the post‐Moore era due to their structural and functional resemblance to biological synapses, as well as their potential for achieving ultrahigh energy efficiency and powerful computing performance. While significant progress has been made in using memristor crossbars for neural network implementation in artificial intelligence (AI), challenges remain in fabricating large‐scale arrays from diverse resistive switching (RS) materials for various applications. The ultimate commercialization of memristors, necessitating a paradigm shift from traditional transistor dominance, also faces substantial hurdles. This review first outlines the development history of neuromorphic memristors and their typical crossbar structures, especially 3D integration. Subsequently, the structure, working principle, and key performance parameters of memristor crossbars based on different RS materials are compared in detail. Furthermore, this review systematically elaborates on the key obstacles faced by large memristor crossbars in different application scenarios, offering valuable insights into their future commercialization prospects.
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