Photoluminescence studies of the interface of CdS/CdTe heterojunctions

Abstract The photoluminescence analysis of CdS/CdTe interface layer of CdS/CdTe heterojunction has been carried out in the 15‐100 K temperature range. An attempt to correlate observed PL features with the CdS x Te 1– x layer presence at the interface of the heterojunctions was made. It is assumed the 1.525 eV band has an excitonic origin and 1.37X PL band is a characteristic impurity band due to CdSTe layer. Comparative plots showing SnO 2 /CdTe PL spectra are given as well. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)