反铁磁性
非阻塞I/O
密度泛函理论
凝聚态物理
基础(线性代数)
材料科学
物理
结晶学
基准集
量子力学
化学
数学
几何学
生物化学
催化作用
作者
Fabrizio Cinquini,Livia Giordano,Gianfranco Pacchioni,Anna Maria Ferrari,C. Pisani,C. Roetti
标识
DOI:10.1103/physrevb.74.165403
摘要
The electronic properties of unsupported and supported NiO films on Ag(100) have been studied theoretically using two methods. Results from density functional theory using the $\mathrm{GGA}+\mathrm{U}$ approach and plane wave basis sets have been compared with those obtained with a hybrid functional and an atomic orbital basis set. In general the two approaches provide similar answers, with the exception of the NiO band gap which is better reproduced in the hybrid DFT approach. Both unsupported and supported films have an antiferromagnetic ordering, and only the magnetization of the Ni ions at direct contact with the metal substrate is slightly reduced, the rest being basically unperturbed. At variance with $\mathrm{Mg}\mathrm{O}∕\mathrm{Ag}(100)$ interfaces, NiO films adhere to Ag(100) with a bonding which includes also important covalent contributions. This results in a much smaller work function change than in $\mathrm{Mg}\mathrm{O}∕\mathrm{Ag}(100)$ and in tails of the NiO states which contribute to the density of states at the Fermi level.
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