兴奋剂
薄脆饼
硅
材料科学
电子迁移率
航程(航空)
光电子学
大气温度范围
功能(生物学)
热力学
物理
复合材料
进化生物学
生物
作者
Peiting Zheng,Fiacre Rougieux,Daniel Macdonald,Andrés Cuevas
出处
期刊:IEEE Journal of Photovoltaics
日期:2014-03-01
卷期号:4 (2): 560-565
被引量:6
标识
DOI:10.1109/jphotov.2013.2294755
摘要
Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of the electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By separately analyzing those three functional dependences, we then develop a simple mathematical expression to describe the mobility sum as a function of carrier injection wafer doping and temperature from 150 to 450 K. This new parameterization also provides experimental validation to Klaassen's and Dorkel-Leturcq's mobility models in a range of temperatures.
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