传感器
材料科学
超声波传感器
声学
压电
占空比
晶体管
MOSFET
谐振器
光电子学
频带
谐振逆变器
500千赫
自动频率控制
电气工程
电压
物理
工程类
逆变器
天线(收音机)
作者
Hiroki Yokozawa,Jens Twiefel,Michael Weinstein,Takeshi Morita
标识
DOI:10.7567/jjap.56.07je08
摘要
Controlling the resonant frequency of ultrasonic transducers is important to achieve the excellent performance of ultrasonic devices. The resonant frequency can be shifted by a nonlinear effect or by increasing the temperature under high-power operation. We propose a resonant frequency control method during the transducer's operation that enables the dynamic compensation of resonant frequency shifts. To realize this, a transducer with passive piezoelectric parts was fabricated. By controlling the electric boundary condition of the passive piezoelectric parts between short and open by utilizing a metal–oxide–semiconductor field-effect transistor (MOSFET), the stiffness was changed, thus modifying the resonant frequency. In both simulation and experiment, the resonant frequency was modified successfully by controlling the switching duty ratio of the MOSFET. Additionally, a system for exciting a transducer at a resonant state with a wide frequency band was demonstrated.
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