光电二极管
光电探测器
材料科学
光电子学
光学
硅
锥面
光圈(计算机存储器)
肖特基二极管
制作
纳米尺度
二极管
物理
纳米技术
医学
病理
复合材料
替代医学
声学
作者
Matityahu Karelits,Yaakov Mandelbaum,Avraham Chelly,Avi Karsenty
标识
DOI:10.1117/1.jnp.11.046021
摘要
A type of silicon photodiode has been designed and simulated to probe the optical near field and detect evanescent waves. These waves convey subwavelength resolution. This photodiode consists of a truncated conical shaped, silicon Schottky diode having a subwavelength aperture of 150 nm. Electrical and electro-optical simulations have been conducted. These results are promising toward the fabrication of a new generation of photodetector devices.
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