钨
材料科学
纳米结构
二硫化钨
纳米技术
纳米管
薄膜
化学工程
复合材料
碳纳米管
冶金
工程类
作者
Sheung Mei Ng,Hon Fai Wong,Wai Yeung Wong,Choon Kiat Tan,Sin Yuk Choi,Chee Leung Mak,Guijun Li,Qing Dong,Chun Wah Leung
标识
DOI:10.1016/j.matchemphys.2016.06.069
摘要
Transition metal dichalcogenides can exhibit as 2-dimensional layers, 1-dimensional nanotubes or 0-dimensional quantum dot structures. In general, dichalcogenide nanotubes are grown under stringent conditions, using high growth temperatures with tedious processes. Here, we report the controlled formation of tungsten disulphide (WS2) nanostructures by manipulating the precursor film thickness, followed by a direct sulphurization process. WS2 nanotubes were formed by ultra-thin tungsten precursor films, while particle-like WS2 were obtained from thicker tungsten films under identical sulphurization conditions. To elucidate the origin of WS2 nanostructure formation, micron-sized tungsten film tracks were prepared, and such patterned films were found to suppress the growth of WS2 nanotubes. We attribute the suppression of nanotube formation to the relieving of film stress in patterned precursor films.
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