光伏
光伏系统
材料科学
氢化物
外延
半导体
可再生能源
工程物理
纳米技术
化学气相沉积
太阳能电池
薄膜
光电子学
电气工程
金属
工程类
冶金
图层(电子)
作者
Ann L. Greenaway,Jason W. Boucher,Sebastian Z. Oener,Christopher J. Funch,Shannon W. Boettcher
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2017-08-31
卷期号:2 (10): 2270-2282
被引量:47
标识
DOI:10.1021/acsenergylett.7b00633
摘要
III–V semiconductors form the most efficient single- and multijunction photovoltaics. Metal–organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the primary commercial growth method for these materials. In order for the use of highly efficient III–V-based devices to be expanded as the demand for renewable electricity grows, a lower-cost approach to the growth of these materials is needed. This Review focuses on three deposition techniques compatible with current device architectures: hydride vapor-phase epitaxy, close-spaced vapor transport, and thin-film vapor–liquid–solid growth. We consider recent advances in each technique, including the available materials space, before providing an in-depth comparison of growth technology advantages and limitations and considering the impact of modifications to the method of production on the cost of the final photovoltaics.
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