Auger recombination in InGaAsP

Auger recombination in InGaAsP is calculated taking into account a realistic band structure instead of the usual parabolic approximation. It follows that the direct conduction-band process is negligible (at T=300 K), contrary to the parabolic approximation. Actually the valence-band process prevails by far as long as only direct Auger processes are considered. However, if phonon-assisted Auger recombination is included the phonon-assisted conduction-band process dominates. Altogether, a decrease of Auger recombination results, which is in agreement with experiments.