光电子学
材料科学
百叶窗
绝缘体上的硅
响应度
二极管
硅
CMOS芯片
功率(物理)
图像传感器
电压
作者
Daisuke Fujisawa,Yasuhiro Kosasayama,Takao Takikawa,Hisatoshi Hata,Takashi Takenaga,Tetsuya Satake,Koichi Yamashita,Daisuke Suzuki
摘要
In this study, we develop a shutter-less algorithm for a silicon-on-insulator (SOI) diode uncooled infrared focal plane array (IRFPA). The optimal non-uniformity correction is calculated onboard. The effectiveness of the proposed algorithm was verified using a prototype uncooled IR camera. The performance of the shutter-less algorithm was studied by measuring a fixed pattern noise (FPN) at different correction points and verification of favorable camera operation. Even at two correction points, the FPN was at a practical level. The temperature behavior of the proposed SOI diode is highly uniform and predictable, which leads to simpler device modeling and therefore simpler shutter-less operation. A new pixel structure was also developed for pixel size reduction. This approach is based on the realization of a novel thermal isolation structure that can be fabricated by post processing on top of CMOS wafers. Ten series diodes can be arranged in a pixel by designing a 12 μm pixel pitch IRFPA with the new pixel structure. These developed technologies have significantly enhanced the performance of the SOI diode uncooled IRFPA, which inherently possesses excellent uniformity and low noise.
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