噪声系数
低噪声放大器
放大器
噪音(视频)
电气工程
功率增益
高电子迁移率晶体管
电子工程
Ku波段
计算机科学
物理
工程类
CMOS芯片
晶体管
电压
人工智能
图像(数学)
作者
B T Venkatesh Murthy,Nitish Kumar Singh,Rajdeep Jha,Nilesh Kumar,Raj Kumar
标识
DOI:10.1109/icces48766.2020.9137956
摘要
In this paper, a Ku-band LNA at 13– 16 GHz is designed with low NF, high gain, and low power consumption for space application This paper presents high gain, too low noise figure, and low power consumption low noise amplifier (LNA). Simultaneously achieving high gain and low noise figure (NF), a popular source degeneration technique is used. Also for achieving high gain, this work is implemented with three-stage cascade source degeneration technique. The proposed work also aims to optimize the input, output and isolation losses. For achieving a low noise figure, InGaAs HEMT technology is used and Ku Band at 13–16 GHz LNA is designed for space application. Simulated results are NF of 1.008 and 0.719 dB and gain of 29.70 and 22.83 dB. The less than −12 dB is achieved for return losses of input and output. The Stability Factor and Mu1 are greater than 3 at desired 13–16 GHz. The amplifier biasing V ds , I ds is 2V and 10 mA respectively are chosen. The Keysight Technology Advanced Design System is used for simulating all parameters. The LNA consumes the power of 250 mW from the simulated values.
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