铁电性
半导体
材料科学
ABX试验
钙钛矿(结构)
极地的
锡
光电子学
电介质
结晶学
化学
冶金
物理
天文
数学
统计
作者
Han‐Yue Zhang,Xiaogang Chen,Zhi‐Xu Zhang,Xiaojing Song,Tie Zhang,Qiang Pan,Yi Zhang,Ren‐Gen Xiong
标识
DOI:10.1002/adma.202005213
摘要
Abstract 3D ABX 3 organic–inorganic halide perovskite (OIHP) semiconductors like [CH 3 NH 3 ]PbI 3 have received great attention because of their various properties for wide applications. However, although a number of low‐dimensional lead‐based OIHP ferroelectric semiconductors have been documented, obtaining 3D ABX 3 OIHP ferroelectric semiconductors is challenging. Herein, an A‐site cation [CH 3 PH 3 ] + (methylphosphonium, MP) is employed to successfully obtain a lead‐free 3D ABX 3 OIHP ferroelectric semiconductor MPSnBr 3 , which shows clear above‐room‐temperature ferroelectricity and a direct bandgap of 2.62 eV. It is emphasized that MPSnBr 3 is a multiaxial molecular ferroelectric with the number of ferroelectric polar axes being as many as 12, which is far more than those of the other OIHP ferroelectric semiconductors and even the classical inorganic perovskite ferroelectric semiconductors BiFeO 3 (4 polar axes) and BaTiO 3 (3 polar axes). MPSnBr 3 is the first MP‐based 3D ABX 3 OIHP ferroelectric semiconductor. This finding throws light on the exploration of other excellent 3D ABX 3 OIHP ferroelectric semiconductors with great application prospects.
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