ELECTROABSORPTION OF UNSTRAINED InGaAs/InAlGaAs MULTIPLE QUANTUM WELL STRUCTURE GROWN ON GaAs SUBSTRATES

Large electroabsorption was observed in InGaAs/InAlGaAs multiple quantum well structures grown on GaAs substrates operating near 1.3 μm. The molecular beam epitaxy (MBE) growth of these structures was incorporation of a carefully designed InAlAs multistage strain-relaxed buffer. The optical absorption spectra as a function of the reverse bias at room temperature are shown. The good characteristics of the optical modulators fabricated on this structure have indicated its potential for practical applications of high-speed modulation.