Electrical conduction behavior of organic light‐emitting diodes using fluorinated self‐assembled monolayer with molybdenum oxide‐doped hole transporting layer

The electrical conductivity behavior of a fluorinated self-assembled monolayer (FSAM) of a molybdenum oxide (MoOx)-doped α-naphthyl diamine derivative (α-NPD) in organic light-emitting diodes (OLEDs) was investigated. The current density of the MoOx-doped α-NPD/FSAM device was proportional to its voltage owing to smooth carrier injection through the FSAM and the high carrier density of its bulk. The temperature-dependent characteristics of this device were investigated. The current density-voltage characteristics at different temperatures were almost the same owing to its very low activation energy. The activation energy of the device was estimated to be 1.056 × 10(-2) [eV] and was very low due to the inelastic electron tunneling of FSAM molecules.