雪崩光电二极管
光电二极管
物理
光电子学
光学
探测器
作者
Jingyi Wang,Huachen Ge,Yue Liao,Daqi Shen,Linze Li,M. Zha,T. Lo Hine Long,Qiushi Chen,Zhiyang Xie,Hao Ji,Pengfei Tian,Baile Chen
出处
期刊:IEEE Photonics Technology Letters
[Institute of Electrical and Electronics Engineers]
日期:2024-03-01
卷期号:36 (5): 293-296
标识
DOI:10.1109/lpt.2024.3352010
摘要
In this work, we demonstrate two InGaP/AlGaAs heterojunction avalanche photodiodes with Al component of 0.8 and 0.6 for Li-Fi applications in near-UV and visible light bands. The devices exhibit high multiplication gain, low dark current, and low excess noise factor. By incorporating an InGaP p-layer with a low recombination velocity, we overcome the issue of low UV and near-UV response caused by the high surface recombination of GaAs and AlGaAs materials. The Al 0.8 Ga 0.2 As device with a recessed window showed an external quantum efficiency (EQE) of 13.12% at 355 nm and 27.12% at 405 nm, with a peak EQE of 38.72% at 440 nm. The Al 0.6 Ga 0.4 As device exhibits a peak EQE of 43.55% at 540 nm. Furthermore, the photodiodes demonstrate a 3 dB bandwidth of up to 1.59 GHz at 405 nm and 1.12GHz at 520 nm at 99% breakdown voltage. This indicates their future potential for applications in short-distance visible and near-UV light communications.
科研通智能强力驱动
Strongly Powered by AbleSci AI